3N164 DIE
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
$1.22
Available to order
Reference Price (USD)
1+
$1.22000
500+
$1.2078
1000+
$1.1956
1500+
$1.1834
2000+
$1.1712
2500+
$1.159
Exquisite packaging
Discount
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Discover 3N164 DIE, a versatile Transistors - FETs, MOSFETs - Single solution from Linear Integrated Systems, Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50mA
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -6.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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