3N170 TO-72 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
N-CHANNEL ENHANCEMENT MODE MOSFE
$6.49
Available to order
Reference Price (USD)
1+
$6.49000
500+
$6.4251
1000+
$6.3602
1500+
$6.2953
2000+
$6.2304
2500+
$6.1655
Exquisite packaging
Discount
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Experience the power of 3N170 TO-72 4L, a premium Transistors - FETs, MOSFETs - Single from Linear Integrated Systems, Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 3N170 TO-72 4L is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 30mA
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200Ohm @ 100µA, 10V
- Vgs(th) (Max) @ Id: 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±35V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 300mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
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