3N187
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
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For designers requiring robust EMC performance, Harris Corporation's 3N187 JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 6.5 V
- Drain to Source Voltage (Vdss): 20 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 50 µA
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 330 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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