70T3339S200BC
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 256CABGA
$267.02
Available to order
Reference Price (USD)
12+
$154.65500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's potential with Renesas Electronics America Inc 70T3339S200BC Memory ICs, crafted for precision and performance. Suitable for robotics, surveillance systems, and smart grids, these ICs boast features like non-volatile storage, high-speed interfaces, and minimal power draw. Renesas Electronics America Inc 70T3339S200BC delivers unmatched quality. Start a conversation with us today to explore customized solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
Related Products
Microchip Technology
25AA160DT-I/MNY
Infineon Technologies
S29GL512S11DHA023
ISSI, Integrated Silicon Solution Inc
IS64LF12832EC-7.5TQLA3
Macronix
MX25U1632FM2I02
Renesas Electronics America Inc
70T633S12BFI8
Rochester Electronics, LLC
CY2149-45PC
Fairchild Semiconductor
FM24C128LN
Infineon Technologies
CY7C135-15JXC
ISSI, Integrated Silicon Solution Inc
IS43LQ32256A-062BLI
Winbond Electronics