70T3339S200BC8
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 256CABGA
$267.02
Available to order
Reference Price (USD)
1,000+
$127.72620
Exquisite packaging
Discount
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Trust Renesas Electronics America Inc 70T3339S200BC8 Memory ICs for all your critical storage needs, offering industry-leading technology. Designed for applications in military, healthcare, and telecommunications, these ICs feature secure data retention, high cycle endurance, and broad compatibility. Renesas Electronics America Inc 70T3339S200BC8 sets the standard in memory innovation. Place your inquiry now and benefit from our expertise and support!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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