A2G26H281-04SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$199.62
Available to order
Reference Price (USD)
250+
$148.70332
Exquisite packaging
Discount
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Meet NXP USA Inc.'s A2G26H281-04SR3, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 14.2dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 50W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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