A2G35S160-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$174.99
Available to order
Reference Price (USD)
250+
$116.37008
Exquisite packaging
Discount
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NXP USA Inc. delivers precision with the A2G35S160-01SR3 RF MOSFET family, optimized for low-voltage/high-current scenarios. Perfect for automotive radar and IoT connectivity modules, they provide stable operation across temperature extremes. Each unit undergoes strict validation protocols. Need samples? Submit your request and we ll expedite your evaluation process!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 15.7dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 190 mA
- Power - Output: 51dBm
- Voltage - Rated: 125 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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