A2G35S200-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$185.62
Available to order
Reference Price (USD)
250+
$123.43584
Exquisite packaging
Discount
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NXP USA Inc. presents the A2G35S200-01SR3 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 16.1dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 291 mA
- Power - Output: 180W
- Voltage - Rated: 125 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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