A2I08H040GNR1
NXP USA Inc.
NXP USA Inc.
IC RF LDMOS AMP
$5.70
Available to order
Reference Price (USD)
500+
$36.15760
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s A2I08H040GNR1 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 920MHz
- Gain: 30.7dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 25 mA
- Power - Output: 9W
- Voltage - Rated: 65 V
- Package / Case: TO-270-15 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-15
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