A2T21H450W19SR6
NXP Semiconductors
NXP Semiconductors
A2T21H450W19 - AIRFAST RF POWER
$217.43
Available to order
Reference Price (USD)
150+
$195.20833
Exquisite packaging
Discount
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The A2T21H450W19SR6 by NXP Semiconductors redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 15.7dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 89W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S-4S4S
- Supplier Device Package: NI-1230S-4S4S
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