A2T23H200W23SR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$135.00
Available to order
Reference Price (USD)
150+
$58.11540
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s A2T23H200W23SR6 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 15.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 51W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
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