A2T26H300-24SR6
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$157.40
Available to order
Reference Price (USD)
150+
$134.02107
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance A2T26H300-24SR6 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.5GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
Related Products
Ampleon USA Inc.
BLS6G3135-20,112
NXP USA Inc.
MRFE6S9060GNR1
NXP USA Inc.
A2G22S251-01SR3
Wolfspeed, Inc.
PTFC261402FC-V1-R0
NXP USA Inc.
BF1210,115
onsemi
NTD4865NT4H
Ampleon USA Inc.
BLS7G2325L-105,112
Wolfspeed, Inc.
CGH60015D-GP4
Renesas Electronics America Inc
NE3515S02-T1D-A
Ampleon USA Inc.