A2T27S020GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$32.81
Available to order
Reference Price (USD)
500+
$18.74662
Exquisite packaging
Discount
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NXP USA Inc. presents the A2T27S020GNR1 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 400MHz ~ 2.7GHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 185 mA
- Power - Output: 20W
- Voltage - Rated: 65 V
- Package / Case: TO-270BA
- Supplier Device Package: TO-270-2 GULL
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