A3G26H350W17SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR,
$206.75
Available to order
Reference Price (USD)
1+
$206.74860
500+
$204.681114
1000+
$202.613628
1500+
$200.546142
2000+
$198.478656
2500+
$196.41117
Exquisite packaging
Discount
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The A3G26H350W17SR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 13.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 59W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4S2S
- Supplier Device Package: NI-780S-4S2S
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