A3I25D080GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$40.58
Available to order
Reference Price (USD)
1+
$40.58000
500+
$40.1742
1000+
$39.7684
1500+
$39.3626
2000+
$38.9568
2500+
$38.551
Exquisite packaging
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Discover high-performance A3I25D080GNR1 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 29.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 175 mA
- Power - Output: 8.3W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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