AFGB30T65SQDN
onsemi
onsemi
650V/30A FS4 IGBT TO263 A
$4.76
Available to order
Reference Price (USD)
800+
$2.56620
Exquisite packaging
Discount
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The AFGB30T65SQDN Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every AFGB30T65SQDN with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 220 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 14.5ns/63.2ns
- Test Condition: 400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr): 245 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-3 (TO-263-3)
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