AFT18H357-24SR6
NXP USA Inc.
NXP USA Inc.
RF MOSFET LDMOS DL 28V NI1230-4
$75.96
Available to order
Reference Price (USD)
150+
$156.33327
Exquisite packaging
Discount
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Discover high-performance AFT18H357-24SR6 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz
- Gain: 17.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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