AFV09P350-04NR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 105V 920MHZ OM780-4
$163.01
Available to order
Reference Price (USD)
250+
$199.30544
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance AFV09P350-04NR3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 920MHz
- Gain: 19.5dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 860 mA
- Power - Output: 100W
- Voltage - Rated: 105 V
- Package / Case: OM-780-4L
- Supplier Device Package: OM-780-4L
Related Products
NXP USA Inc.
MMRF1317HSR5
Ampleon USA Inc.
BLF7G24LS-100,112
Ampleon USA Inc.
BLP8G10S-45PY
Ampleon USA Inc.
BLS6G2731S-130,112
Ampleon USA Inc.
BLF6G27LS-40P,112
Ampleon USA Inc.
BLC8G27LS-240AVU
Texas Instruments
TPIC46L02DBLE
Ampleon USA Inc.
BLC9G20LS-240PVZ
Microchip Technology
ARF466AG
Ampleon USA Inc.