AIGB50N65H5ATMA1
Infineon Technologies
Infineon Technologies
DISCRETE SWITCHES
$5.65
Available to order
Reference Price (USD)
1+
$5.65000
500+
$5.5935
1000+
$5.537
1500+
$5.4805
2000+
$5.424
2500+
$5.3675
Exquisite packaging
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Enhance your electronic designs with AIGB50N65H5ATMA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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