AIGW50N65F5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V TO247-3
$7.78
Available to order
Reference Price (USD)
1+
$6.95000
10+
$6.32600
240+
$5.32229
720+
$4.69806
1,200+
$4.15523
Exquisite packaging
Discount
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Discover high-performance AIGW50N65F5XKSA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, AIGW50N65F5XKSA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 490µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 1018 nC
- Td (on/off) @ 25°C: 21ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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