APT33GF120B2RDQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 64A 357W TMAX
$18.19
Available to order
Reference Price (USD)
1+
$19.30000
10+
$17.54300
25+
$16.22720
100+
$14.91150
250+
$13.59580
500+
$12.71866
Exquisite packaging
Discount
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The APT33GF120B2RDQ2G Single IGBT from Microchip Technology redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Microchip Technology stands behind every APT33GF120B2RDQ2G with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Power - Max: 357 W
- Switching Energy: 1.315mJ (on), 1.515mJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 14ns/185ns
- Test Condition: 800V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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