APT34F100B2
Microchip Technology
Microchip Technology
MOSFET N-CH 1000V 35A T-MAX
$24.39
Available to order
Reference Price (USD)
30+
$19.28200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose APT34F100B2 by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with APT34F100B2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
Related Products
Fairchild Semiconductor
FQAF44N10
Infineon Technologies
IPP60R600P7XKSA1
onsemi
NTR3C21NZT1G
Fairchild Semiconductor
FDI9406-F085
Fairchild Semiconductor
FDS3670
Vishay Siliconix
IRFZ24SPBF
Infineon Technologies
IPP070N08N3G
Infineon Technologies
BSC076N06NS3GATMA1
onsemi
NTMFS4C56NT1G
Alpha & Omega Semiconductor Inc.