APTM100H35FT3G
Microchip Technology
Microchip Technology
MOSFET 4N-CH 1000V 22A SP3
$164.99
Available to order
Reference Price (USD)
100+
$100.07640
Exquisite packaging
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The APTM100H35FT3G by Microchip Technology is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Microchip Technology s APTM100H35FT3G be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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