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APTMC60TL11CT3AG

Microchip Technology
APTMC60TL11CT3AG Preview
Microchip Technology
MOSFET 4N-CH 1200V 28A SP3
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel (Three Level Inverter)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Power - Max: 125W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3

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