BAP51L,315
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 60V 500MW DFN1006-2
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Achieve unparalleled RF performance with BAP51L,315 RF Diodes from NXP USA Inc.. These diodes are crafted for precision and durability, suitable for a wide range of applications from IoT devices to 5G networks. NXP USA Inc. leads the industry in semiconductor innovation. Contact us now for more details.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 60V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
- Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 500 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: DFN1006-2
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