BAT1503WE6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 100MW SOD323-2
$0.58
Available to order
Reference Price (USD)
3,000+
$0.16321
6,000+
$0.15383
15,000+
$0.14914
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAT1503WE6327HTSA1 RF Diodes by Infineon Technologies are the go-to choice for engineers seeking high-frequency precision. With excellent thermal stability and low power loss, these diodes are perfect for radar and satellite systems. Choose Infineon Technologies for reliable RF components. Contact us today to discuss your requirements.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110 mA
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
Related Products
Microsemi Corporation
UPP1001/TR13
MACOM Technology Solutions
MSS40-148-H20
Toshiba Semiconductor and Storage
JDV2S07FSTPL3
Microchip Technology
LXS101-23-4
NTE Electronics, Inc
NTE555A
NXP USA Inc.
BAP65-05W,115
MACOM Technology Solutions
LM202802-Q-C-301-T
Skyworks Solutions Inc.
SMP1322-005LF
Vishay General Semiconductor - Diodes Division
BA479S-TR
MACOM Technology Solutions