BAT1504WE6327BTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 100MW SOT323-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAT1504WE6327BTSA1 RF Diodes by Infineon Technologies set the standard for quality in high-frequency applications. With robust construction and excellent signal handling, these diodes are perfect for defense and communication systems. Choose Infineon Technologies for dependable RF solutions. Reach out today to learn more.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110 mA
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
Related Products
Infineon Technologies
BAR6302LE6433XT
Broadcom Limited
HSMS-286P-TR1G
MACOM Technology Solutions
MMPN080150
Broadcom Limited
HSMP-389L-TR1G
Vishay General Semiconductor - Diodes Division
BA783-G3-08
Infineon Technologies
BAT6804WE6327BTSA1
Broadcom Limited
HSMS-2810-BLKG
Vishay General Semiconductor - Diodes Division
BA783S-G3-18
Vishay General Semiconductor - Diodes Division
BA283-TR
Broadcom Limited