BAT1704E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT23-3
$0.51
Available to order
Reference Price (USD)
3,000+
$0.08957
6,000+
$0.08139
15,000+
$0.07321
30,000+
$0.06912
75,000+
$0.06217
150,000+
$0.06012
Exquisite packaging
Discount
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Discover high-performance BAT1704E6327HTSA1 RF Diodes from Infineon Technologies, designed for precision and reliability in radio frequency applications. These diodes are essential components in communication systems, offering excellent signal clarity and durability. Whether you're working on wireless infrastructure or consumer electronics, BAT1704E6327HTSA1 ensures top-tier performance. Contact us today for a quote and elevate your RF solutions with Infineon Technologies's cutting-edge technology.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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