BAT1705WH6327XTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT323-3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.08550
6,000+
$0.08075
15,000+
$0.07363
30,000+
$0.06888
75,000+
$0.06650
Exquisite packaging
Discount
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Upgrade your RF applications with the BAT1705WH6327XTSA1 RF Diodes by Infineon Technologies. Known for their superior efficiency and low noise, these diodes are perfect for high-frequency circuits. Ideal for use in amplifiers, mixers, and detectors, BAT1705WH6327XTSA1 delivers unmatched performance. Reach out now to learn more about how Infineon Technologies can meet your RF diode needs.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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