BAT62E6327
Infineon Technologies
Infineon Technologies
MIXER DIODE, LOW BARRIER
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The BAT62E6327 RF Diodes by Infineon Technologies set the standard for quality in high-frequency applications. With robust construction and excellent signal handling, these diodes are perfect for defense and communication systems. Choose Infineon Technologies for dependable RF solutions. Reach out today to learn more.
Specifications
- Product Status: Active
- Diode Type: Schottky - Anti-Parallel
- Voltage - Peak Reverse (Max): 40V
- Current - Max: 20 mA
- Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143-4
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