BAT6806WE6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT323-3
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Upgrade your RF applications with the BAT6806WE6327HTSA1 RF Diodes by Infineon Technologies. Known for their superior efficiency and low noise, these diodes are perfect for high-frequency circuits. Ideal for use in amplifiers, mixers, and detectors, BAT6806WE6327HTSA1 delivers unmatched performance. Reach out now to learn more about how Infineon Technologies can meet your RF diode needs.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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