BAT68E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT23-3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.10467
6,000+
$0.09941
15,000+
$0.09152
30,000+
$0.08626
75,000+
$0.07837
150,000+
$0.07574
Exquisite packaging
Discount
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The BAT68E6327HTSA1 RF Diodes by Infineon Technologies are the go-to choice for engineers seeking high-frequency precision. With excellent thermal stability and low power loss, these diodes are perfect for radar and satellite systems. Choose Infineon Technologies for reliable RF components. Contact us today to discuss your requirements.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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