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BAV21W-G RHG

Taiwan Semiconductor Corporation
BAV21W-G RHG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD123
$0.04
Available to order
Reference Price (USD)
3,000+
$0.03672
6,000+
$0.03312
15,000+
$0.02880
30,000+
$0.02592
75,000+
$0.02304
150,000+
$0.02016
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C

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