BB804SF1E6327
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BB804SF1E6327 from Infineon Technologies sets new benchmarks in varicap diode efficiency, featuring patented junction designs for ultra-low distortion in high-power RF amplifiers. Applications span from amateur radio to quantum computing peripherals, backed by Infineon Technologies's ISO 9001-certified production. We provide cross-reference assistance and counterfeit protection guarantees. Your innovation deserves authentic components submit your inquiry before midnight for same-day response!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
- Capacitance Ratio: 1.71
- Capacitance Ratio Condition: C2/C8
- Voltage - Peak Reverse (Max): 18 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 2V, 100MHz
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Diodes Incorporated
ZMV831BTC
Diodes Incorporated
ZC831ATA
Panasonic Electronic Components
MA2SV0700L
Skyworks Solutions Inc.
SMV1771-040LF
Skyworks Solutions Inc.
SMV1770-040LF
Panasonic Electronic Components
MA27V2300L
Infineon Technologies
BBY 53-02W E6327
Diodes Incorporated
ZC833BTA
Skyworks Solutions Inc.
SMV1251-011LF
Diodes Incorporated