BBY5806WE6327
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BBY5806WE6327 from Infineon Technologies sets new benchmarks in varicap diode efficiency, featuring patented junction designs for ultra-low distortion in high-power RF amplifiers. Applications span from amateur radio to quantum computing peripherals, backed by Infineon Technologies's ISO 9001-certified production. We provide cross-reference assistance and counterfeit protection guarantees. Your innovation deserves authentic components submit your inquiry before midnight for same-day response!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
- Capacitance Ratio: 3.5
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: 1 Pair Common Anode
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
onsemi
MMVL535T1
NTE Electronics, Inc
NTE612
NXP USA Inc.
BB156,115
Panasonic Electronic Components
MA2S37400L
MACOM Technology Solutions
MAVR-000250-0287FT
MACOM Technology Solutions
MAVR-001340-1146FT
NXP USA Inc.
BB174X
Toshiba Semiconductor and Storage
1SV304TPH3F
NXP USA Inc.
BB178,115
Panasonic Electronic Components