BC817RAZ
Nexperia USA Inc.
Nexperia USA Inc.
BC817RA/SOT1268/DFN1412-6
$0.41
Available to order
Reference Price (USD)
5,000+
$0.06765
10,000+
$0.06105
25,000+
$0.05775
50,000+
$0.05445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency with Nexperia USA Inc.'s BC817RAZ BJT Arrays, engineered for precision and reliability. These arrays boast low power consumption, high current capacity, and excellent thermal characteristics, making them a top choice for power supply and signal processing circuits. Ideal for telecommunications, robotics, and IoT devices. Don't miss out reach out to our sales team for more details and special offers!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
Related Products
Rohm Semiconductor
QS5Y1TR
onsemi
SST45011MW6T1G
Nexperia USA Inc.
PBSS4021SPN,115
Panjit International Inc.
BC846AS-AU_R1_000A1
Nexperia USA Inc.
PMBT3946VPN,115
Linear Integrated Systems, Inc.
LS350 DIE
onsemi
MCH6544-TL-E
Linear Integrated Systems, Inc.
IT131 SOIC 8L
onsemi
BC858CDW1T1
Microchip Technology