BC847AQ-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
$0.03
Available to order
Reference Price (USD)
1+
$0.03379
500+
$0.0334521
1000+
$0.0331142
1500+
$0.0327763
2000+
$0.0324384
2500+
$0.0321005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose BC847AQ-7-F by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BC847AQ-7-F is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 310 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
STMicroelectronics
BDW94CFP
Rohm Semiconductor
2SAR544RTL
onsemi
NSVBC857BTT1G
Microchip Technology
JAN2N2218
Diodes Incorporated
DXT5551P5-13
Renesas Electronics America Inc
NESG340033-T1B-A
Nexperia USA Inc.
PBSS5330PA,115
Yangzhou Yangjie Electronic Technology Co.,Ltd
MMBTA92-F2-0000HF
Panjit International Inc.
BC807-16_R1_00001
Yangzhou Yangjie Electronic Technology Co.,Ltd