BC856B/DG/B3235
NXP USA Inc.
NXP USA Inc.
TRANS PNP 65V 0.1A TO236AB
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose BC856B/DG/B3235 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BC856B/DG/B3235 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
NTE Electronics, Inc
2N4399
NXP USA Inc.
PDTD143XQA147
Diodes Incorporated
FZT957TA
NXP USA Inc.
PHPT60610NY115
NTE Electronics, Inc
2N6109
NTE Electronics, Inc
2N5684
onsemi
MJE15033G
onsemi
EC3201C-TL
onsemi
MMBT2484LT3G
Diotec Semiconductor