BCR10PNH6730XTMA1
Infineon Technologies
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality BCR10PNH6730XTMA1 Bipolar Junction Transistor (BJT) Arrays from Infineon Technologies, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Infineon Technologies's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
onsemi
NSVBC114EDXV6T1G
Diodes Incorporated
ADA114YUQ-13
Toshiba Semiconductor and Storage
RN1968(TE85L,F)
Rohm Semiconductor
QSH29TR
Micro Commercial Co
UMH2N-TP
Toshiba Semiconductor and Storage
RN2907FE,LF(CT
Nexperia USA Inc.
PUMH4,115
Nexperia USA Inc.
PQMD13Z
Toshiba Semiconductor and Storage
RN2962(TE85L,F)
onsemi