BCR119WH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
$0.06
Available to order
Reference Price (USD)
36,000+
$0.02957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic projects with the BCR119WH6327XTSA1 from Infineon Technologies, a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. Infineon Technologies ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
Related Products
onsemi
MUN5215T1
onsemi
NSVDTC144TM3T5G
onsemi
SMUN2214T3G
Diodes Incorporated
DDTC143TCAQ-13-F
Rohm Semiconductor
DTC123YCAT116
onsemi
NSBA114EF3T5G
Diodes Incorporated
DDTC144VCA-7-F
Micro Commercial Co
DTA124EE-TP
onsemi
SMMUN2111LT3G
Rohm Semiconductor