BCR133E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 0.2W SOT23-3
$0.05
Available to order
Reference Price (USD)
1+
$0.04680
500+
$0.046332
1000+
$0.045864
1500+
$0.045396
2000+
$0.044928
2500+
$0.04446
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality BCR133E6433HTMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Infineon Technologies for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Diodes Incorporated
DDTC143ZCAQ-7-F
Toshiba Semiconductor and Storage
RN2311,LXHF
onsemi
MUN2140T1G
Diodes Incorporated
DDTC144ECA-7-F
Rohm Semiconductor
DTC143ZUAT106
NXP USA Inc.
PDTC123TMB,315
Nexperia USA Inc.
PDTD113ZTVL
onsemi
SMMUN2211LT1G
Rohm Semiconductor
DTA043XMT2L
Diodes Incorporated