BCR135E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
1+
$0.04680
500+
$0.046332
1000+
$0.045864
1500+
$0.045396
2000+
$0.044928
2500+
$0.04446
Exquisite packaging
Discount
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The BCR135E6433HTMA1 from Infineon Technologies is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Infineon Technologies for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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