BCR135SH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.07259
6,000+
$0.06594
15,000+
$0.05928
30,000+
$0.05595
75,000+
$0.05040
Exquisite packaging
Discount
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Experience precision engineering with Infineon Technologies's BCR135SH6327XTSA1 Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Infineon Technologies provides comprehensive technical resources for BCR135SH6327XTSA1 integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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