BCR158E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 0.2W SOT23-3
$0.06
Available to order
Reference Price (USD)
3,000+
$0.03647
6,000+
$0.03171
15,000+
$0.02695
30,000+
$0.02537
75,000+
$0.02378
150,000+
$0.02114
Exquisite packaging
Discount
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The BCR158E6327HTSA1 from Infineon Technologies is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Infineon Technologies for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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