Shopping cart

Subtotal: $0.00

BCR158WH6327XTSA1

Infineon Technologies
BCR158WH6327XTSA1 Preview
Infineon Technologies
TRANS PREBIAS PNP 250MW SOT323-3
$0.06
Available to order
Reference Price (USD)
36,000+
$0.02957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323

Related Products

Infineon Technologies

BCR192E6327HTSA1

Toshiba Semiconductor and Storage

RN2117MFV,L3F

Nexperia USA Inc.

PDTB123EUF

Rohm Semiconductor

DTC123ECAHZGT116

Infineon Technologies

BCR141E6433HTMA1

Nexperia USA Inc.

PDTA124XQB-QZ

Rohm Semiconductor

DTB113ECT116

Panasonic Electronic Components

UNR511400L

Rohm Semiconductor

DTD143EKFRAT146

Top