BCR183E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.03934
6,000+
$0.03458
15,000+
$0.02982
30,000+
$0.02824
75,000+
$0.02665
150,000+
$0.02401
Exquisite packaging
Discount
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Discover high-quality BCR183E6327HTSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Infineon Technologies for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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