BCR183WH6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR183WH6327 by Infineon Technologies is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Infineon Technologies stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
Related Products
Diodes Incorporated
DDTA114WCA-7
Nexperia USA Inc.
PDTC114EM,315
Panasonic Electronic Components
DRA3144W0L
Toshiba Semiconductor and Storage
RN2107,LF(CT
Toshiba Semiconductor and Storage
RN1131MFV(TL3,T)
Panasonic Electronic Components
UNR32A4G0L
Rohm Semiconductor
DTA123YCAT116
Diodes Incorporated
DDTA144GE-7
Diodes Incorporated
DDTA124GUA-7-F
Toshiba Semiconductor and Storage