BCR192E6785HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23-3
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR192E6785HTSA1 from Infineon Technologies is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Infineon Technologies for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Last Time Buy
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Toshiba Semiconductor and Storage
RN1308,LXHF
Rohm Semiconductor
DTA024EMT2L
Rohm Semiconductor
DTA114TKAT146
Rohm Semiconductor
DTC043XEBTL
Panasonic Electronic Components
UNR921MJ0L
Toshiba Semiconductor and Storage
RN2301,LF
Diodes Incorporated
DDTC125TCA-7-F
Diodes Incorporated
ADTC143TUAQ-13
Rohm Semiconductor
DTA123EKAT146
Rohm Semiconductor