BCR35PNH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN/PNP 50V SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.07259
6,000+
$0.06594
15,000+
$0.05928
30,000+
$0.05595
75,000+
$0.05040
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select Infineon Technologies's BCR35PNH6327XTSA1 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Infineon Technologies offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your BCR35PNH6327XTSA1 inquiry our team awaits your requirements!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
Panasonic Electronic Components
XP0431100L
Nexperia USA Inc.
PBLS6003D,115
Toshiba Semiconductor and Storage
RN1711,LF
Infineon Technologies
BCR183S
Diodes Incorporated
ADC114EUQ-7
Rohm Semiconductor
EMD6T2R
Nexperia USA Inc.
PEMH18,115
Rohm Semiconductor
EMH75T2R
onsemi
NSVBC143ZPDXV6T1G
Toshiba Semiconductor and Storage