BCW66KGE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 0.8A SOT23
$0.06
Available to order
Reference Price (USD)
42,000+
$0.03460
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality BCW66KGE6327HTSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single are designed for reliability and performance, making them ideal for various electronic applications. These transistors feature excellent amplification and switching capabilities, ensuring optimal performance in your circuits. Perfect for use in amplifiers, switches, and other electronic devices, BCW66KGE6327HTSA1 delivers consistent results. Interested in learning more? Contact us today for a quote and let Infineon Technologies meet your semiconductor needs.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
NTE Electronics, Inc
NTE60
Fairchild Semiconductor
FJP5554TU
Microchip Technology
2N2605UB
NXP Semiconductors
PMPB100XPEA,115
Diodes Incorporated
FZT717TA
onsemi
MMBT2369LT3G
Diodes Incorporated
BC856BQ-7-F
Rohm Semiconductor
SSTA56HZGT116
onsemi
2SB1202S-E
Fairchild Semiconductor